多层铁电陶瓷击穿分析及优化  

Electric field analyses and optimization of multilayer ferroelectric ceramics

作　　者：王强[1] 王文斗[1] 谢龙[1] 蒋吉昊[1] 刘高旻[1] 

机构地区：[1]中国工程物理研究院流体物理研究所,四川绵阳621900

出　　处：《强激光与粒子束》2012年第3期567-570,共4页High Power Laser and Particle Beams

基　　金：中国工程物理研究院科学技术发展基金项目(2010B0402052)

摘　　要：建立了多层串联PZT95/5爆电换能组件3维数值模型,对固化封装条件下陶瓷介质击穿问题进行了计算分析,计算结果表明:在不改动器件外部结构尺寸条件下,采用等厚度PZT95/5叠片结构布局对进一步提高输出电压方面存在瓶颈。为克服上述影响以及降低爆电换能组件击穿概率,提出了PZT95/5铁电陶瓷非等厚度布局解决方案。为实现上述设想,通过引入不等式约束条件计算得到一组非等厚度优化布局,将爆电换能组件所用PZT95/5铁电陶瓷数量减至19片,同时有效实现该布局下,各片PZT95/5陶瓷电压均低于对应厚度击穿电压的优化目标。The lead zirconate titanate PbZr0.95Ti0.05O3（PZT95/5） ferroelectric ceramics are generally used in the explosive-electric transducer,as multilayer PZT95/5 thin films arrangement to realize high voltage output.However,the dielectric breakdown of the ceramics needs to be taken seriously.A quasi-static electric field model has been developed for voltage distribution analysis of multilayer PZT95/5 ceramics compressed by shock wave in the normal mode.The calculation results reveal that the electric potential difference of PZT95/5 films increases nonlinearly from ground electrode to output electrode.Since the thickness of ceramic materials has an effect upon dielectric strength,it is a suitable way to avoid device dielectric breakdown by designing carefully the nonuniform layout of PZT95/5 thin films.By using inequality restriction,an nonuniform layout optimization of PZT95/5 films arrangement is obtained,which reduces the layer number to 19 and makes the voltage of each layer of PZT95/5 element being lower than its breakdown voltage.

关 键 词：铁电陶瓷 爆电换能 介电击穿 数值优化 

分 类 号：O482.4[理学—固体物理]