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作 者:孙晓园[1] 李春杰[1] 贺小光[1] 于立军[1] 高允锋[1] 骆永石[2] 张家骅[2]
机构地区:[1]长春师范学院物理学院,吉林长春130032 [2]发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春130033
出 处:《发光学报》2012年第4期389-393,共5页Chinese Journal of Luminescence
基 金:吉林省科技发展计划项目(201101106);长春师范学院自然科学基金(长师院自科合字[2009]第007号;长师院自科合字政策[2010]第002号)资助项目
摘 要:通过在Sr2SiO4∶Eu2+荧光粉中加入MgO,提高了Sr2SiO4∶Eu2+荧光粉的蓝光和黄光发射带的发射强度,研究了MgO浓度对Sr2SiO4∶Eu2+荧光粉发光强度的影响。当Mg与Si的量比在1.0附近时,荧光粉的亮度较高,且发光颜色为白色。通过调节Sr2SiO4∶yEu2+,MgO荧光粉中Eu2+的掺杂浓度,可以调节荧光粉的发光颜色。用Sr2SiO4∶Eu2+,MgO和400 nm的InGaN管芯制备的白光LED,色坐标优于α'-Sr2SiO4∶Eu2+和β-Sr2SiO4∶Eu2+荧光粉制成的白光LED,显色指数和流明效率高于β-Sr2SiO4∶Eu2+和α'-Sr2SiO4∶Eu2+制成的白光LED。MgO-doped Sr2SiO4:Eu^2+ phosphors were synthesized. The introduction of MgO strongly enhances the blue and yellow emission intensity of Sr2SiO4:Eu^2+ phosphors. The luminescence properties as a function of MgO and Eu^2+ concentrations were studied. White, light emission phos- phors were obtained when the molar ratio of Mg and Si is around 1.0 under excitation of 400 nm. White light-emitting diode through the integration of InGaN near-UV chip and Sr2SiO4:Eu^2+ , MgO phosphor was fabricated and exhibited better characteristic parameters than that of the α-Sr2SiO4: Eu2 + and β-Sr2SiO4:Eu^2+ phosphors.
关 键 词:Sr2SO4∶Eu2+ 荧光粉 发光 白光LED
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