Electron Density and Optical Emission Measurements of SF_6/O_2 Plasmas for Silicon Etch Processes  

作　　者：M.M.MORSHED S.M.DANIELS 

机构地区：[1]National Centre for Plasma Science and Technology,School of Electronic Engineering,Dublin City University,Glasnevin,Dublin 9,Ireland

出　　处：《Plasma Science and Technology》2012年第4期316-320,共5页等离子体科学和技术（英文版）

基　　金：supported by the EC Framework 7 IMPROVE research project (IR -2008-0013);the Science Foundation Ireland PRECISION project (08-SRC-I1411)

摘　　要：This work investigates internal plasma process parameters using a hairpin resonance probe and optical emission spectroscopy. The dependence of electron density and atomic fluorine on the percentage of oxygen in an SF6/O2 discharge was measured using these methods. An RIE Oxford Instruments 80 plus chamber was used for the experiments. Two different process powers （100 W and 300 W） at a constant pressure （100 mTorr） were used, and it was found that the optical emission intensity of the 703.7 nm and 685.6 nm lines of atomic fluorine increased rapidly as oxygen was added to the SF6 discharge, reached their maximum at an O2 fraction of 20% and then decreased with further addition of oxygen. The plasma electron density was also strongly influenced by the addition of O2.This work investigates internal plasma process parameters using a hairpin resonance probe and optical emission spectroscopy. The dependence of electron density and atomic fluorine on the percentage of oxygen in an SF6/O2 discharge was measured using these methods. An RIE Oxford Instruments 80 plus chamber was used for the experiments. Two different process powers （100 W and 300 W） at a constant pressure （100 mTorr） were used, and it was found that the optical emission intensity of the 703.7 nm and 685.6 nm lines of atomic fluorine increased rapidly as oxygen was added to the SF6 discharge, reached their maximum at an O2 fraction of 20% and then decreased with further addition of oxygen. The plasma electron density was also strongly influenced by the addition of O2.

关 键 词：OES hairpin probe SF6 O2 electron density atomic fluorine 

分 类 号：O53[理学—等离子体物理] S158.3[理学—物理]