中带电压法分离栅控横向pnp双极晶体管辐照感生缺陷  

Use the subthreshold-current technique to separate radiation induced defects in gate controlled lateral pnp bipolar transistors

作　　者：席善斌[1,2,3] 陆妩[1,2] 王志宽[4] 任迪远[1,2] 周东[1,2,3] 文林[1,2] 孙静[1,2] 

机构地区：[1]中国科学院新疆理化技术研究所,乌鲁木齐830011 [2]新疆电子信息材料与器件重点实验室,乌鲁木齐830011 [3]中国科学院研究生院,北京100049 [4]模拟集成电路国家重点实验室,重庆400060

出　　处：《物理学报》2012年第7期350-355,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:10975182)资助的课题~~

摘　　要：设计并制作了一种新型双极测试结构,即在常规横向pnp双极晶体管基区表面氧化层上淀积一栅电极,通过扫描栅极所加电压,获得漏极(集电极)电流随栅极电压的变化特性,利用中带电压法分离栅控横向pnp双极晶体管在辐照过程中感生的氧化物陷阱电荷和界面陷阱电荷.本文对设计的晶体管测试结构和采用的测试方法做了具体介绍.In this paper,we design and fabricate a new test structure of bipolar device.A gate is deposited on the oxide layer covering the base region of normal lateral pnp bipolar transistor.The characteristic of drain current（collector current） versus the gate voltage is recorded by sweeping the voltage applied to the gate,then the subthreshold-current technique is used to separate the radiation induced oxide trapped charges and interface traps in the gate controlled lateral pnp bipolar transistor during ^（60）Co-γirradiation.The test structure and the measurement of the bipolar transistor used in the experiment are introduced in detail in this paper.

关 键 词：中带电压法 栅控 横向pnp双极晶体管 电荷分离 

分 类 号：TN322.8[电子电信—物理电子学]