非对称HALO掺杂栅交叠轻掺杂漏围栅MOSFET的解析模型  

Analytical modeling of asymmetric HALO-doped surrounding-gate MOSFET with gate overlapped lightly-doped drain

作　　者：李聪[1] 庄奕琪[1] 韩茹[2] 张丽[1] 包军林[1] 

机构地区：[1]西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室,西安710071 [2]西北工业大学航空微电子中心,西安710072

出　　处：《物理学报》2012年第7期536-543,共8页Acta Physica Sinica

基　　金：中央高校基本科研业务费专项资金(批准号:K50511250001);国家自然科学基金(批准号:61076101)资助的课题~~

摘　　要：为抑制短沟道效应和热载流子效应,提出了一种非对称HALO掺杂栅交叠轻掺杂漏围栅MOSFET新结构.通过在圆柱坐标系中精确求解三段连续的泊松方程,推导出新结构的沟道静电势、阈值电压以及亚阈值电流的解析模型.结果表明,新结构可有效抑制短沟道效应和热载流子效应,并具有较小的关态电流.此外,分析还表明栅交叠区的掺杂浓度对器件的亚阈值电流几乎没有影响,而栅电极功函数对亚阈值电流的影响较大.解析模型结果和三维数值仿真工具ISE所得结果高度符合.A novel asymmetric HALO-doped surrounding-gate MOSFET with gate overlapped lightly-doped drain is presented.The performance of the new structure is studied by developing physics-based analytical models for surface potential,threshold voltage,and subthreshold current.It is found that the new structure can effectively suppress the short-channel effects and the hot-carrier effects,and simultaneously reduce the off-state current.It is also revealed that subthreshold current is a slight function of doping concentration of overlapped region,while work-function of gate electrode has a strong influence on subthreshold current.The accuracy of the analytical model is verified by its good agreement with the three-dimensional numerical device simulator ISE.

关 键 词：非对称HALO掺杂 栅交叠轻掺杂漏 围栅MOSFET 解析模型 

分 类 号：TN386[电子电信—物理电子学]