中温烧结PZN-PZT系陶瓷的压电性能研究  

Piezoelectric Properties of PZN-PZT Ceramics Sintered at Middle Temperatures

作　　者：江向平[1] 廖军[1] 魏晓勇[1] 张望重[1] 李国荣[1] 陈大任[1] 殷庆瑞[1] 

机构地区：[1]中国科学院上海硅酸盐所无机功能材料开放实验室,上海200050

出　　处：《无机材料学报》2000年第2期281-286,共6页Journal of Inorganic Materials

基　　金：上海市科技发展基金!(99JC14015)

摘　　要：在多层压电器件的研制过程中，为实现压电陶瓷和Ａｇ／Ｐｄ内电极的共烧结，本文对中温１１００～１１４０℃范围烧成的ＰＺＮ－ＰＺ－ＰＴ系压电陶瓷的电性能进行了研究，结果表明，保温时间对该组成的压电介电性能有重要的影响，随保温时间的延长，ｄ３３从４２０×１０－１２Ｃ／Ｎ增加到 ５６０×１０－１２Ｃ／Ｎ，　Ｔ３３从 ２１８０增加到 ２９００。In order to realize the co-sintering with Ag/Pd electrodes in multilayer devices, PZNPZT piezoelectric ceramics were prepared by a conventional technique in the sintering temperature range from 1100℃ to 1140℃ and their piezoelectric and dielectric properties were carefully studied. The results show that soaking time is the most important factor concerning with piezoelectric and dielectric properties, d33 increases from 420× 10-12C/N to 560x 10-12C/N and T33 increases from 2100 to 2900 with the increase of soaking time.

关 键 词：中温烧结 PZN-PZT 压电性能 介电性能 压电陶瓷 

分 类 号：TM282.051[一般工业技术—材料科学与工程]