The influence and explanation of fringing-induced barrier lowering on sub-100 nm MOSFETs with high-k gate dielectrics  

作　　者：马飞 刘红侠 匡潜玮 樊继斌 

机构地区：[1]Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Material and Devices,School of Microelectronics,Xidian University

出　　处：《Chinese Physics B》2012年第5期602-606,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.60936005 and 61076097);the Cultivation Fund of the Key Scientific and Technical Innovation Project of Ministry of Education of China(Grant No.708083);the Fundamental Research Funds for the Central Universities,China(Grant No.20110203110012)

摘　　要：The fringing-induced barrier lowering（FIBL） effect of sub-100 nm MOSFETs with high-k gate dielectrics is investigated using a two-dimensional device simulator.An equivalent capacitance theory is proposed to explain the physics mechanism of the FIBL effect.The FIBL effect is enhanced and the short channel performance is degraded with increasing capacitance.Based on equivalent capacitance theory,the influences of channel length,junction depth,gate/lightly doped drain（LDD） overlap length,spacer material and spacer width on FIBL is thoroughly investigated.A stack gate dielectric is presented to suppress the FIBL effect.The fringing-induced barrier lowering（FIBL） effect of sub-100 nm MOSFETs with high-k gate dielectrics is investigated using a two-dimensional device simulator.An equivalent capacitance theory is proposed to explain the physics mechanism of the FIBL effect.The FIBL effect is enhanced and the short channel performance is degraded with increasing capacitance.Based on equivalent capacitance theory,the influences of channel length,junction depth,gate/lightly doped drain（LDD） overlap length,spacer material and spacer width on FIBL is thoroughly investigated.A stack gate dielectric is presented to suppress the FIBL effect.

关 键 词：high-k gate dielectric fringing-induced barrier lowering stack gate dielectric MOSFET 

分 类 号：TN386.1[电子电信—物理电子学] TB383[一般工业技术—材料科学与工程]