Preparing Cu_2ZnSnS_4 films using the co-electrodeposition method with ionic liquids  

作　　者：陈永生 王英君 李瑞 谷锦华 卢景霄 杨仕娥 

机构地区：[1]Key Laboratory of Material Physics,Department of Physics,Zhengzhou University

出　　处：《Chinese Physics B》2012年第5期697-700,共4页中国物理B（英文版）

基　　金：Project supported by the National Key Basic Research Program of China (Grant No. 2011CBA00706);the National Natural Science Foundation of China (Grant No. 51007082);the Basis and Frontier Technology Research Plan Projects of HenanProvince,China (Grant No. 102300410075)

摘　　要：Cu2ZnSnS4（CZTS） films are successfully prepared by co-electrodeposition in aqueous ionic solution and sulfurized in elemental sulfur vapor ambient at 400 C for 30 min using nitrogen as the protective gas.It is found that the CZTS film synthesized at Cu/（Zn＋Sn）=0.71 has a kesterite structure,a bandgap of about 1.51 eV,and an absorption coefficient of the order of 10 4 cm 1.This indicates that the co-electrodeposition method with aqueous ionic solution is a viable process for the growth of CZTS films for application in photovoltaic devices.Cu2ZnSnS4（CZTS） films are successfully prepared by co-electrodeposition in aqueous ionic solution and sulfurized in elemental sulfur vapor ambient at 400 C for 30 min using nitrogen as the protective gas.It is found that the CZTS film synthesized at Cu/（Zn＋Sn）=0.71 has a kesterite structure,a bandgap of about 1.51 eV,and an absorption coefficient of the order of 10 4 cm 1.This indicates that the co-electrodeposition method with aqueous ionic solution is a viable process for the growth of CZTS films for application in photovoltaic devices.

关 键 词：SULFURIZATION Cu2ZnSnS4 co-electrodeposition 

分 类 号：TB383.2[一般工业技术—材料科学与工程]