晶体硅组件长期运行后性能及衰退原因分析  

ANALYSIS OF PERFORMANCE AND DEGRADATION OF SILICON PV MODULES AFTER LONG TERM OPERATION

作　　者：郑海兴[1,2] 舒碧芬[1] 沈辉[1] 陈美园[1] 梁齐兵[1] 葛文君[1] 

机构地区：[1]中山大学太阳能系统研究所,广州510006 [2]广东产品质量监督检验研究院,广州510330

出　　处：《太阳能学报》2012年第4期614-617,共4页Acta Energiae Solaris Sinica

基　　金：国家自然科学基金(50476039);广东省自然科学基金(04009761)

摘　　要：介绍了两组已使用20a以上的晶体硅光伏组件的电性能测试结果,分析并评价了组件的电性能状况,统计、归纳了组件的一些外观缺陷,并分析了导致组件失效和电性能衰减的原因。测试结果表明:户外使用20a的多晶硅光伏组件平均功率仅下降6.1%,单晶硅光伏组件的平均功率下降13.0%,均能表现出良好的电性能,为晶体硅电池的寿命估计提供了有力数据。The test results of electrical performance for two batches of silicon PV modules were analyzed, and the evaluation was made by statistics analysis of the results, some visual defects were concluded in order to analyze the reasons which lead to performance degradation of PV modules. The results indicate that the average degradation of poly-Si PV module is only 6. 1% ; mono-silieon module is 13.0%, which still show good performance and provide a powerful data in predicting the life of PV module.

关 键 词：晶体硅光伏组件 电性能 衰退 寿命 

分 类 号：TK514[动力工程及工程热物理—热能工程]