Ag在单晶硅(111)基面上的反应润湿与固液界面能计算  

Reactive wetting and calculation of solid-liquid interfacial energy of silver-silicon(111)

作　　者：廖选茂[1] 朱定一[1] 

机构地区：[1]福州大学材料科学与工程学院,福建福州350108

出　　处：《福州大学学报（自然科学版）》2012年第2期265-269,共5页Journal of Fuzhou University(Natural Science Edition)

基　　金：国家自然科学基金资助项目(50471007);福建省自然科学基金资助项目(2011J01292)

摘　　要：采用滴座法研究Ag在高定向生长单晶硅(111)基面上的高温反应润湿行为及固液界面结构.结果表明,Ag/Si(111)润湿体系在1 200℃高温下的最终润湿角为96.7°,呈现不润湿现象,反应润湿界面有Si原子溶解到液态Ag中,但没有新相生成,Si和Ag仍以单质形式存在,因此Ag(l)/Si(s)界面能保持不变.通过计算得到1 200℃下Ag/Si(111)润湿体系的固体表面能和固液界面能分别为565.6和667.1 mJ.m-2.In this paper, the reactive wetting behavior of silver and the solid - liquid interfacial struc- ture of reactive wetting were investigated on the crystal face （ 111 ） of the single crystal silicon by the sessile drop technique at high temperature. It was showed that the final contact angle of silver - silicon （111 ） was 96.7°at 1 200 ℃, appearing unwetting. Atomic diffusion of silicon was detected in the molten silver matrix. However, no new phase emerged at the interface, with the Si and Ag existing in the form of simple substance. Thus the interfacial energy of silver - silicon （111） remained un- changed. The calculated solid surface energy of silicon and solid - liquid interfacial energy of silver - silicon （111） were 565.6 and 667.1 mJ·m^-2respectively at 1 200℃.

关 键 词：润湿角 固液界面能 反应型润湿 AG 单晶硅 

分 类 号：TG496[金属学及工艺—焊接]