列阵半导体激光器中热相互作用及改进技术的研究  

Study of Thermal Interaction and Its Improvement Technique in Semiconductor Laser Arrays

作　　者：晏长岭[1] 费文伯 钟景昌[3] 赵英杰[3] 黎荣辉 

机构地区：[1]中国科学院长春物理研究所,长春130023 [2]东北大学理学院,沈阳110006 [3]长春光机学院半导体激光国家重点实验室,长春130022

出　　处：《中国激光》2000年第5期390-396,共7页Chinese Journal of Lasers

摘　　要：从半导体激光器产生的热量在热沉中的扩散入手 ,对列阵单元器件间的热相互作用进行了分析 ,提出了该过程是通过热流的扩散而发生作用的观点。通过这一分析获得了确定列阵器件中单元器件间距的理论依据。对二维列阵中上、下层器件的热相互影响以及脉冲工作的占空比进行了讨论 ,并将结果应用到 1.55μm半导体激光列阵器件中。采用漏光波导结构的单元器件 ,实现了二维 2× 2 ,2× 4两种列阵 ,其脉冲输出峰值功率分别达到 7W和 11W。Considering the diffusion of heat generated by semiconductor lasers in the heat sink, the thermal interaction among single devices in the array have been analyzed. The idea of the thermal interaction caused from the diffusion of heat current is proposed. From analyses, how to determine the separation between upper and lower devices in the 2D array and how to select the duty cycle in the pulsed operation have been studied. The result of analyses has been applied to design the 1.55 μm wavelength semiconductor laser array. Two kinds of 2D arrays of 2×2, 2×4 consisted of single devices with leaky waveguide structure with their pulsed peak power output of 7 W and 11 W, respectively, have been completed.

关 键 词：列阵器件 半导体激光器 热相互作用 

分 类 号：TN248.4[电子电信—物理电子学]