紫(外)激光作用下Si(CH_3)_4的MPI与Si原子的共振电离  

Violet(ultraviolet)laser MPI of tetramethylsilane and resonant ionization of silicon atom

作　　者：施德恒[1] 刘新建[2] 许启富[1] 刘玉芳[3] 

机构地区：[1]空军第一航空学院,信阳464000 [2]信阳教育学院物理系,信阳464000 [3]河南师范大学物理系,新乡453002

出　　处：《激光杂志》2000年第3期32-35,共4页Laser Journal

摘　　要：在紫 (外 )激光作用下 ,利用平行板电极装置及飞行时间 (TOF)质谱仪 ,研究了Si(CH3 ) 4分子的多光子电离 (MPI)、多光子解离 (MPD)及由Si(CH3 ) 4解离产生的Si原子的共振电离。得到了 40 4～ 378nm内Si(CH3 ) 4的MPI光谱及某些波长点处的TOF质谱。根据实验结果 ,讨论了Si(CH3 ) 4的MPI机理 ,得到了一些有意义的结论。Multiphoton ionization(MPI) and multiphoton dissociation(MPD) of tetramethylsilane and dissociation of resonant ionization of silicon atom from multiphoton dissociation of tetramethyl silane were studied with a parallel plate vacuum cell and the time-of-flight(TOF) mass spectrum system radiated by violet(ultraviolet)laser of 404～378nm.MPI spectra and TOF mass spectra of tetramethylsilane were gained at 404～378nm.According to the experimental results,MPI mechanism of tetramethylsilane was discussed.

关 键 词：多光子电离 共振电离 多光子解离 硅 

分 类 号：TN241[电子电信—物理电子学]