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作 者:李冬生[1] 杨斌[1] 刘大春[2] 邓勇[2] 徐宝强[2]
机构地区:[1]昆明理工大学真空冶金国家工程实验室,昆明650093 [2]云南省有色金属真空冶金重点实验室,昆明650093
出 处:《真空科学与技术学报》2012年第4期296-300,共5页Chinese Journal of Vacuum Science and Technology
基 金:云南省科技创新强省计划(2009AA003);国家提高自主创新能力和高技术产业专项项目计划
摘 要:利用纯度为99.7%粗铟为原料,采用真空蒸馏的方法从粗铟中直接脱除镉、锌、铊、铅。分别进行了蒸馏温度、蒸馏时间、投料量等的条件实验。结果表明,控制真空度1~5 Pa,蒸馏温度950℃,蒸馏120 min,可将粗铟中镉、锌、铊、铅可除至6N高纯铟要求。并且以实验结果为依据计算出产物中各种杂质的挥发系数、分离系数、活度系数,对铟的热力学数据的完善有一定的参考意义。A novel technology has been successfully developed to purify the 99.7% crude indium by removing the Cd,Zn,Tl and Pb impurities in vacuum distillation.The impacts of the distillation conditions,including the distillation temperature and time,thickness of the molten crude indium,and pressure,on the purity of indium were evaluated.Various parameters of basic interest,such as the volatile and separation coefficients as well as the activity quotient of the different impurities,were derived.The results show that under the optimized conditions:1~5 Pa,950℃,120 min,the content of Cd,Zn,Tl and Pb could be reduce to the standard of 6N by vacuum distillation.Possible mechanisms responsible for impurity evaporation were also tentatively discussed.
分 类 号:TF843.1[冶金工程—有色金属冶金]
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