添加Bi_4Ti_3O_(12)对BST陶瓷性能的影响  

Effects of adding Bi_4Ti_3O_(12) on properties of BST ceramics

作　　者：黄新友[1] 李言 高春华[1] 林榕 黄瑞南 

机构地区：[1]江苏大学材料科学与工程学院,江苏镇江212013 [2]汕头高新区松田实业有限公司,广东汕头515041

出　　处：《电子元件与材料》2012年第5期8-11,共4页Electronic Components And Materials

基　　金：江苏省科技支撑计划资助项目(No.BE2008029);广东省教育部产学研结合项目资助(No.2011B090400027)

摘　　要：采用固相法制备了添加Bi4Ti3O12(BIT)的(Ba0.71Sr0.29)TiO3(BST)陶瓷,研究了BIT的加入量对所制BST陶瓷的微观结构和介电性能的影响。结果表明:随着BIT添加量的增加,BST陶瓷的晶粒尺寸先减小后增大,相对介电常数(εr)逐渐减小,介质损耗(tanδ)先减小后增大。当添加质量分数26%的BIT于1 120℃烧结,制得的BST陶瓷综合性能较好:εr为1 700,tanδ为0.006,容温特性符合X7R的要求,耐直流电压强度为5.0×103V/mm。Bi4Ti3O12（BIT） added（Ba0.71Sr0.29）TiO3（BST） ceramics were prepared by solid state method.Effects of BIT adding amount on the dielectric properties and microstructure of prepared BST ceramics were investigated.The results show that the crystal grain size decreases first and then increases,the relative permittivity（εr） decreases,the dielectric loss（tanδ） decreases first and then increases when BIT adding amount incerases.The BST ceramics prepared with mass fraction of 26% of BIT and sintered at 1 120 ℃ possess good comprehensive properties： εr of 1 700,tanδ of 0.006.The capacitance temperature property of the BST ceramics is suited for X7R,and the DC withstand voltage strength is 5.0×103 V/mm.

关 键 词：电容器陶瓷 钛酸锶钡 Bi4Ti3O12添加量 介电性能 

分 类 号：TN304[电子电信—物理电子学] TQ174[化学工程—陶瓷工业]