Growth of Thin Silicon on Sapphire (SOS) Film Materials and Device Applications  

薄层SOS薄膜材料外延生长及其器件应用(英文)

作　　者：王启元[1] 聂纪平[1] 刘忠立[1] 郁元桓[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》2000年第6期521-528,共8页半导体学报（英文版）

摘　　要：The increasing emphasis on the sub\|micron CMOS/SOS devices has placed a demand for high quality thin silicon on sapphire (SOS) films with thickness of the order 100-200nm. It is demonstrated that the crystalline quality of as\|grown thin SOS films by chemically vapor deposition method can be greatly improved by solid phase epitaxy (SPE) process: implantation of self\|silicon ions and subsequent thermal annealing. Subsequent regrowth of this amorphous layer leads to a great improvement in silicon layer crystallinity and channel carrier mobility, respectively by double crystal X\|ray diffraction and electrical measurements. Thin SPE SOS films would have application to the high\|performance CMOS circuitry.亚微米 CMOS/ SOS器件发展对高质量的 1 0 0 - 2 0 0纳米厚度的薄层 SOS薄膜提出了更高的要求 .实验证实 :采用 CVD方法生长的原生 SOS薄膜的晶体质量可以通过固相外延工艺得到明显改进 .该工艺包括 :硅离子自注入和热退火 .X射线双晶衍射和器件电学测量表明 :多晶化的 SOS薄膜固相外延生长导致硅外延层晶体质量改进和载流子迁移率提高 .固相外延改进的薄层 SOS薄膜材料能够应用于先进的 CMOS电路 .

关 键 词：SILICON epitaxial growth solid phase epitaxy 

分 类 号：TN304.054[电子电信—物理电子学] TM304.055[电气工程—电机]