一维掺杂光子晶体结构参数对带隙结构影响  

Effect of Structure Parameter of One-Dimensional Doped Photonic Crystal on Photonic Band Gap Structure

作　　者：郭立帅[1] 

机构地区：[1]陇东学院物理与电子工程学院,甘肃庆阳745000

出　　处：《延安大学学报（自然科学版）》2012年第1期40-42,共3页Journal of Yan'an University：Natural Science Edition

摘　　要：基于传输矩阵法,数值研究了掺杂一维光子晶体带隙特征。研究表明:一维掺杂光晶体禁带中心位置出现一个极窄的导带,当杂质前半部分层数给定时,后半部分总存在一个层数,使得禁带中心导带的深度达到最大,在此基础上通过改变基本层厚度发现,禁带中心的导带深度仍然最大,我们可以通过改变基本层厚度厚度,让特定波长的光顺利通过。The properties of band - gap of one - dimensional doped photonic crystal are studied by using numerical- ly method based on the transfer matrix method. The result shows that a narrow conduction band appears in the cen- tre of forbidden band in one - dimensional doped photonic crystal. The depth of conduction band appears in the centre of forbidden band has a maximum, which was caused by the number of layers of the second half of impurity where the first one was fixed. It shows that the forbidden band center＇s conduction band depth was still biggest by means of changing basic level thickness.

关 键 词：物理光学 传输矩阵法 一维光子晶体 光子带隙结构 

分 类 号：O434[机械工程—光学工程]