半导体BaTiO_3陶瓷PTC效应的研究  

STUDY ON MECHANISM OF PTC EFFECT IN SEMICONDUCTING CERAMIC BaTiO_3

作　　者：冯士明[1] 吴晓东 

机构地区：[1]南京化工学院

出　　处：《硅酸盐学报》1989年第1期53-58,共6页Journal of The Chinese Ceramic Society

摘　　要：本文应用俄歇电子能谱(AES)直接验证了BaTiO_3陶瓷的半导化是由于钛元素的变价(Ti^(4+)+e→Ti^(3+))所致,并据此对材料半导化程度作了半定量的描述;通过电子自旋共振(ESR)对存在于BaTiO_3陶瓷晶界中的Cu、Mn等受主杂质的价态进行了确定。根据以上两种谱仪的检测结果,认为各种晶界受主态类型(晶界氧吸附、Ba空位及氧化态的杂质等)都有可能单独或同时存在,并取决于材料的组成及制备工艺。Auger electron spectroscopy 《(?)》 for PTC thermistor specimens of different realstivities was observed. The results show that the semiconductivities of BaTiO_2 ceramics originate from the change of valency of element Ti:Ti^(4+)→Ti^(3+), and the ratios of the Ti auger triplet at about 382, 416 and 450 eV depend markedly on semiconducting level of the materials.Furthermore, the valency of acceptor-doped impurities such as Cu and Mn and its change In PTC materials with temperature were examined by electron spin resonance (ESR).According to the experimental results and measurements, a new concept about the interface acceptor state is proposed, that is, various interface acceptor states(eg.oxygen absorption, barium vacancies and oxydized impurities etc,)may exist alone or together, which depend on the composition and technology of PTC materials.

关 键 词：半导体 BATIO3陶瓷 PCT热敏电阻 

分 类 号：TN304.82[电子电信—物理电子学]