不同波长激光对绝缘体上硅材料损伤阈值的理论研究与数值分析  

Theoretical Research and Numerical Analysis on Laser with Different Wavelengths Induced Damage Threshold of Silicon-on-Insulator Material

作　　者：刘晨星[1] 张大勇[1] 付博[1] 李阳龙[1] 任攀[1] 

机构地区：[1]中国工程物理研究院流体物理研究所,四川绵阳621900

出　　处：《应用激光》2012年第2期134-138,共5页Applied Laser

摘　　要：分析了不同波长激光辐照绝缘体上硅(SOI)材料时的相互作用机制。使用ANSYS软件热分析模块,通过有限元方法模拟得到波长分别是355、532、1064nm的激光辐照SOI材料后的温度场分布。讨论了不同波长激光辐照SOI材料表面时的自加热现象。The mechanism of interaction between laser with different wavelengthes and Silicon-on-Insulator（SOl） material is studied. The temperature distributions in the SOl material ＇after laser pulse duration are simulated by a finite element analysis method with the ANSYS heat analysis module, and the laser wavelengths are 355 nm, 1064 nm, 532 nm respectively. The self-heating phenomenon in SOl when irradiatied by laser with different wavelengthes is discussed.

关 键 词：SOI材料 波长效应 激光损伤 

分 类 号：O437[机械工程—光学工程]