Investigation of top-emitting OLEDs using molybdenum oxide as anode buffer layer  

作　　者：林慧 于军胜 张伟 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,School of Optoelectronic Information,University of Electronic Science and Technology of China

出　　处：《Optoelectronics Letters》2012年第3期197-200,共4页光电子快报（英文版）

基　　金：supported by the National Natural Science Foundation of China (No.60425101);the Young Excellence Project of University of Electronic Science and Technology of China (No.UESTC-060206);the Fundamental Research Funds for the Central Universities of China (Nos.ZYGX2010Z004 and ZYGX2009J054)

摘　　要：A high-effective bottom anode is essential for high-performance top-emitting organic light-emitting devices (OLEDs). In this paper, Ag-based top-emitting OLEDs are investigated. Ag has the highest reflectivity for visible light among all metals, yet its hole-injection properties are not ideal for anodes of top-emitting OLED. The performance of the devices is significantly improved using the molybdenum oxide as anode buffer layer at the surface of Ag. By introducing the molybdenum oxide, the hole injection from Ag anodes into top-emitting OLED is largely enhanced with rather high reflectivity retained.

关 键 词：Anodes Buffer layers Charge injection Molybdenum oxide SILVER 

分 类 号：TN383.1[电子电信—物理电子学] TN873.3