Synthesis of CNT film on the surface of micro-pyramid array and its intense pulsed emission characteristics  

作　　者：ZENG FanGuang LI Xin LIU WeiHua QIAO ShuZhen MA HuaLi ZHANG Rui XIA LianSheng CHEN Yi LIU XingGuang ZHANG Huang 

机构地区：[1]Department of Mathematics and Physics, Zhengzhou Institute of Aeronautical lndustry Management, Zhengzhou 450015, China [2]School of Electronic and Information Engineer-ing, Xi＇an Jiaotong University, Xi＇an 710049, China [3]Institute of Fluid Physics, Chinese Academy of Engineering Physics, Mianyang 621900, China

出　　处：《Chinese Science Bulletin》2012年第14期1739-1742,共4页

基　　金：supported by the National Natural Science Foundation of China (51072184,50972132,51002143 and 60801022);the Aeronautical Science Foundation of China (2009ZE55003 and 2010ZF55013);the Basic and Advanced Technology Program of Henan (092300410139)

摘　　要：We developed a new scheme to suppress the electric-field-screening effect in high growth density of a carbon nanotube(CNT) film during its intense pulsed emission.We synthesize the CNT film on a tridimensional surface(t-CNT film).The tridimensional surface includes wet etched silicon pyramids,and the Ni layer is electroless plated thereon.The intense pulsed emission characteristics of the t-CNT and planar-grown CNT(p-CNT) films were measured using a diode structure in single-pulse mode.The even turn-on field decreased from 5.5 V/μm for p-CNTs to 2.8 V/m for t-CNTs,and the peak emission current increased from 232 A for p-CNTs to 324 A for t-CNTs at a peak field intensity ～12.2 V/m.The peak current of the t-CNT film increased by ～39.7% over the p-CNT film.It is clear that the micro-pyramid array can effectively suppress the field screening effect to improve the electron-emission of CNT films.We developed a new scheme to suppress the electric-field-screening effect in high growth density of a carbon nanotube （CNT） film during its intense pulsed emission. We synthesize the CNT film on a tridimensional surface （t-CNT film）. The tridimensional surface includes wet etched silicon pyramids, and the Ni layer is electroless plated thereon. The intense pulsed emission characteristics of the t-CNT and planar-grown CNT （p-CNT） films were measured using a diode structure in single-pulse mode. The even turn-on field decreased from 5.5 V/μm for p-CNTs to 2.8 V/μm for t-CNTs, and the peak emission current increased from 232 A for p-CNTs to 324 A for t-CNTs at a peak field intensity -12.2 V/μm. The peak current of the t-CNT film increased by -39.7% over the p-CNT film. It is clear that the micro-pyramid array can effectively suppress the field screening effect to improve the electron-emission of CNT films.

关 键 词：碳纳米管膜 发射特性 强流脉冲 金字塔 微阵列 合成 表面 碳纳米管薄膜 

分 类 号：TB383.2[一般工业技术—材料科学与工程]