硅纳米线研究进展概述  

Research Progress of Silicon Nanowires

作　　者：郑红梅[1] 顾家祯[1] 袁志山[2] 

机构地区：[1]合肥工业大学机械与汽车工程学院,安徽合肥230009 [2]东南大学机械工程学院,江苏南京211189

出　　处：《广州化工》2012年第8期13-15,19,共4页GuangZhou Chemical Industry

基　　金：江苏省微纳生物医疗器械设计与制造重点实验室开放基金资助项目(JSNBI200904)

摘　　要：硅纳米线由于量子限制效应,表现出与体材料不同的物理性质。文章概述了国内外对硅纳米线结构、形貌、成分和力学、电学等物理特性的表征研究的最新进展,揭示了硅纳米线尺寸、表面结构和粒子这三者与性能之间的关系。最后介绍硅纳米线表征研究成果在纳米器件上的应用,并对硅纳米线制备技术和表征技术在未来的发展做了展望。Silicon nanowires （SiNWs） exhibited physical properties different from that of bulk materials due to quan- tum restriction effect. The latest progress at home and abroad in the characterization research work of SiNWs, which in- volves structure, morphology, composition, mechanical, electrical properties and so on, was outlined. Relations between sizes, surface structure, particles and properties of SiNWs were revealed. Characterization research achievements of SiN- Ws in the application of nano devices were introduced and the development of fabrication and characterization technology in the future was discussed.

关 键 词：硅纳米线 体硅 物理性能 表征 应用 

分 类 号：O613.72[理学—无机化学]