Zn_(0.98)Nd_(0.02)O室温拉曼特性和伏安特性  

Investigation of Room-temperature Raman Scattering and Volt-ampere Properties of Zn_(0.98)Nd_(0.02)O

作　　者：文军[1] 

机构地区：[1]渭南师范学院物理与电气工程学院,陕西渭南714000

出　　处：《光电工程》2012年第5期1-6,共6页Opto-Electronic Engineering

基　　金：陕西省教育厅科研计划基金项目(08JK287)

摘　　要：通过固相反应工艺制备了Zn0.98Nd0.02O纳米颗粒,射频磁控溅射技术在Si(111)衬底上制备了Zn0.98Nd0.02O薄膜。应用XRD、AFM以及拉曼光谱等手段,分析了Zn0.98Nd0.02O纳米颗粒与薄膜的结构,并测试了Zn0.98Nd0.02O薄膜的室温伏安特性。表明Nd掺杂没有改变ZnO纤锌矿结构,Zn0.98Nd0.02O颗粒为纳米多晶粉末态,其薄膜为沿(100)、(101)方向生长的纳米多晶结构,表面形貌粗糙。拉曼光谱分析表明,Zn0.98Nd0.02O颗粒的局部应力增大,晶格畸变缺陷增加,缺陷态比较复杂,导致拉曼峰发生频移。Zn0.98Nd0.02O薄膜的室温I-V曲线表明了Zn0.98Nd0.02O薄膜的非线性导电特性。其非线性导电特性源于,薄膜中的载流子受外加电场在薄膜中所产生热激发进入导带导电,环境光中能量高于ZnO带隙的光子引起的光电导效应,以及薄膜中纳米粒子间的隧穿导电。在光辐照作用下,提高了薄膜内浅施主缺陷浓度,降低了薄膜的表面电阻率,增强了Zn0.98Nd0.02O薄膜的导电能力。The Zrlo.gsNd0.020 was prepared by applying the solid phase reacting method, then Zn0.98Nd0.020 thin film was deposited on Si （111） substrate by radio frequency magnetron sputtering technique. Finally the microstructure of the Zn0.98sNd0.020 particle and film was investigated by X-ray diffraction, Atomic Force Microscopy （AFM） and Raman scattering. Volt-Ampere Properties of Zn0.98Nd0.020 film was tested at room temperature. It is found that lattice structure of the Zno.98Nd0.020, hexagonal wurtzite, is not disturbed by Nd-doping. Zno.98Nd0.020 particles are nano-multi-crystal powder, and the film is nano-multi-crystal growing at （100）, （101） orientation, which has rough surface morphology. The room temperature Raman spectrum analysis indicates that the Raman peaks have frequency spectrum displacement, because the local stress strengthened and the defect states become complicated. Through further analysis, the room temperature I-V curves of Zno.98Nd0.020 thin film shows its nonlinear conductivity properties. Several reasons cause the nonlinear conductivity： the carriers in the Zn0.98Nd0.020 thin film are excited by extra electric field thermolly and enter into the conduction band; photos from the environmental light which have energy larger than the band gap of ZnO, aroused the photoconduetion effect; and the tunnel between Nano-particles conducted in the film. Under the light irradiation, the consistence of shallow donor defects increases, and the Zn0.98Nd0.020 thin film surface resistivity decreases, so the conductivity increases.

关 键 词：ND掺杂 ZNO X射线衍射 拉曼散射 伏安特性 

分 类 号：O484[理学—固体物理] TN304[理学—物理]