Sb掺杂SnO_2基NTC热敏陶瓷的制备与电学特性  

Preparation and Electrical Characteristic of Sb-doped SnO_2 Based NTC Thermistors

作　　者：李根[1,2] 陈景超[1,2] 胡湛[1,2] 刘超峰[1,2] 李志成[1,2] 张鸿[1,2] 

机构地区：[1]中南大学材料科学与工程学院,湖南长沙410083 [2]有色金属材料科学与工程教育部重点实验室,湖南长沙410083

出　　处：《材料科学与工程学报》2012年第2期197-201,共5页Journal of Materials Science and Engineering

基　　金：国家自然科学基金(面上)资助项目(50872155)

摘　　要：采用湿化学法制备了锑掺杂氧化锡Sn1-xSbxO2-δ(ATO,x=0.003、0.005、0.007和0.01)粉体材料,并以Li2O-TiO2为助烧剂,用传统烧结工艺制得ATO陶瓷。利用X射线衍射分析了材料的相组成,扫描电子显微镜观察陶瓷的微观结构,通过电阻-温度特性测试仪和交流阻抗谱研究了ATO陶瓷导电性随温度的变化。结果表明,ATO材料具有四方晶体结构;1200℃烧结获得致密度为95%以上的陶瓷试样。该陶瓷材料呈现典型的电阻负温度系数效应。利用能带理论和电子跃迁模型讨论了ATO陶瓷的导电机理。Sn1-xSbxO2-δ（ATO,x=0.003、0.005、0.007 and 0.01） powders were prepared by a wet-chemical synthesis process,and the corresponding ceramics were obtained by the conventional sintering technique with Li2O-TiO2 as the sintering additive.The phase component of the prepared materials was analyzed by using X-ray diffractometry and the ceramic microstructures were observed by scanning electron microscopy.The temperature dependence of resistivity of the ATO ceramics was investigated with the resistance-temperature measurement system and AC impedance analysis.The results show that the ceramics with a relative density of higher than 95% can be obtained by sintering at 1200℃,and the ceramics have a tetragonal crystal structure and show a typical effect of negative temperature coefficient of resistivity.The conduction mechanisms of the ATO ceramics were discussed by using energy band theory and electron hopping model.

关 键 词：锑掺杂氧化锡 化学合成 助烧剂 导电性 电阻负温度系数 

分 类 号：TB321[一般工业技术—材料科学与工程]