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作 者:苗霈[1] 邓军[1] 史衍丽[2] 魏晓航[1] 罗绍军[1]
机构地区:[1]北京工业大学光电子实验室究所,北京100022 [2]昆明物理研究所,昆明650223
出 处:《半导体光电》2012年第2期207-210,共4页Semiconductor Optoelectronics
基 金:国家自然科学基金资助项目(U1037602)
摘 要:采用传输矩阵法和图解法对InAs/GaSb二型超晶格的能带结构参数进行了理论计算,确定量子阱宽、垒宽、垒高、响应波长等参数。针对不同的结构,采用传输矩阵法和图解法得到不同的响应波长,与实际波长相比较,分析了两种算法的优劣之处。结果表明:采用传输矩阵法计算得到的子能带位置进而推算得到的响应波长与实际波长更吻合,而图解法由于本身的局限性,对超晶格结构中能带的计算会带来一定的偏差。A quantum model for the band structures of type-Ⅱ superlattices(taking InAs/GaSb for example) was established with transfer matrix method and graphic method,in order to identify the parameters such as the well width,the barrier width,height of the barrier,response wavelength,etc.Toward different structures,calculations of the response wavelength by using transfer matrix method and graphic method were compared with the real wavelength,and the virtues of the two methods were discussed.By the comparison,it is found that the experiment results show a good agreement with calculations.Toward the superlattice,it shows a better agreement with calculations by using the transfer matrix method,but graphic method should not be used to calculate the band structures of superlattices because of its limitation.
分 类 号:TN301.1[电子电信—物理电子学]
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