基于CCD工艺提取MOS模型的电路验证  

Circuit Verification of MOS Model Extraction Based on CCD Process

作　　者：吕玉冰[1] 祝晓笑[1] 翁雪涛[1] 岳志强[1] 苏玉棉[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2012年第2期221-224,共4页Semiconductor Optoelectronics

摘　　要：对基于CCD工艺提取的BSIM3v3模型,在CCD片上放大器电路上进行了验证,通过在直流、瞬态和交流条件下对比电路的仿真数据和实际测试数据,验证了该模型,即提取的模型能够满足电路模拟的要求。In this paper,a verification process to circuit of BSIM3v3 model extraction based on CCD process is presented.In the verification process,the simulation data and the test data were compared with CCD on-chip amplifier under DC,transient and AC conditions.The results prove that the extracted BSIM3v3 model can meet the requirement of circuit simulation.

关 键 词：CCD 模型参数提取 验证 

分 类 号：TN386.5[电子电信—物理电子学]