不对称双量子点系统中电压调控Kerr非线性增强  

Voltage Control Enhancement of Kerr Nonlinearity in Asymmetric Double Quantum Dots System

作　　者：郭洪菊[1] 王春芳[2] 

机构地区：[1]上海出版印刷高等专科学校,上海200093 [2]上海理工大学,上海200093

出　　处：《激光与光电子学进展》2012年第5期155-159,共5页Laser & Optoelectronics Progress

基　　金：上海市教育委员会优秀青年项目(slg10054);上海市教育委员会科研创新项目(11YZ118)资助课题

摘　　要：从理论上研究了不对称双量子点系统内的Kerr非线性增强效应。系统内量子点间的电压隧穿效应,可以在两个不同的探测频率位置同时诱导电磁感应透明。调节隧穿电压及控制光场可以改变吸收性质,从而得到其中一个透明窗口内无线性和非线性吸收的Kerr非线性增强效应。分析表明,量子点间的电压调控引起的隧穿是产生Kerr非线性增强的关键因素。A theoretical investigation is carried out into the Kerr nonlinear effect of an asymmetric double quantum dots system. Using voltage tunneling, electromagnetically induced transparency can appear synchronously at two different frequency windows. By tuning tunneling voltage and control field suitably, the absorption property is significantly modified and therefore the enhanced Kerr nonlinearity without liner and nonlinear absorption occurs at one of the transparent windows. Analysis shows that voltage controlling between two quantum dots is key factor of the enhancement of Kerr nonlinearity.

关 键 词：KERR非线性 电压隧穿 电磁感应透明 量子点 

分 类 号：O437[机械工程—光学工程]