硅基外延GaAs材料的力学仿真分析  

Mechanical simulation analysis of the Si epitaxial GaAs

作　　者：唐军[1,2] 郭浩[1,2] 刘俊[1,2] 赵锐[1,2] 

机构地区：[1]中北大学仪器科学与动态测试教育部重点实验室,山西太原030051 [2]中北大学电子测试技术国家重点实验室,山西太原030051

出　　处：《传感器与微系统》2012年第5期37-39,43,共4页Transducer and Microsystem Technologies

基　　金：国家自然科学基金重点资助项目(50730009);国家自然科学基金面上项目(61171056)

摘　　要：Si,GaAs,Si基异质外延GaAs三种材料的基本力学特性各有不同,通过理论计算和ANSYS仿真得出相同条件下Si基异质外延GaAs材料中GaAs应力转化率是Si和GaAs材料的1.26倍左右,应力造成的位移系数略小于Si,远远小于GaAs,同时经过计算得出Si基异质外延GaAs材料的量程是GaAs材料的5倍,说明Si基外延GaAs材料不仅机械特性良好,而且还明显优于Si和GaAs,有更好的力电耦合效应需要的机械特性。The basic mechanical properties of materials of Si,GaAs and Si epitaxial GaAs are different.Using the theoretical calculation and ANSYS simulation the strain conversion rate of Si epitaxial GaAs is 1.26 times large than that of Si materials under the same conditions.The displacement coefficient is slightly less than Si,far less than GaAs materials.Meanwhile,the range of Si epitaxial GaAs is 5 times than GaAs materials by calculated.That means the mechanical properties of Si epitaxial GaAs is obviously better than the materials of Si and GaAs and a better force electric coupling effect.

关 键 词：Si基异质外延GaAs材料 应力转化率 位移系数 力电耦合效应 

分 类 号：TB301[一般工业技术—材料科学与工程]