C波段高稳定度磁控管微波源实验研究  

Experimental Study on C Band Magnetron Microwave Sources with High Stabilization

作　　者：郭天鹏[1] 曾正华 郭庆功[1] 尹志超[1] 

机构地区：[1]四川大学电子信息学院,成都610065 [2]电子信息控制重点实验室,成都610036

出　　处：《电子信息对抗技术》2012年第3期74-77,共4页Electronic Information Warfare Technology

摘　　要：由于物理机制和工艺结构的固有限制,各种微波源均有其功率极限,而以锁相技术为基础的功率合成技术是获得大功率微波的一条重要途径。主要研究了以磁控管为基本单元的注入式锁相方案,并且采用注入锁相方法对现有的C波段磁控管进行了锁相实验验证,研制出频率、相位、幅度可调的高稳定度磁控管微波源,并结合实验分析了系统的性能指标。There are power limits on all kinds of microwave sources due to the inherent limitations of physical mechanism and structures. A power combining technology based on phase-locking technology is the one of important methods which can obtain high power microwave. The injection phase-locking constructed by magnetrons is investigated, and the feasibility of phase-locking is proved with experi- ments for C band magnetrons. A high-stability rnagnetron microwave source with frequency, phase and amplitude controlled is developed and the system＇s performance index are analyzed on the experiment.

关 键 词：注入锁相 C波段 高稳定度 磁控管微波功率源 

分 类 号：TN123[电子电信—物理电子学]