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作 者:欧阳攀[1,2] 张鸿[1,2] 李根[1,2] 李志成[1,2]
机构地区:[1]中南大学材料科学与工程学院,湖南长沙410083 [2]中南大学粉末冶金国家重点实验室,湖南长沙410083
出 处:《电子元件与材料》2012年第6期10-14,共5页Electronic Components And Materials
基 金:国家自然科学基金资助项目(No.51172287);粉末冶金国家重点实验室开放课题资助项目
摘 要:采用湿化学法制备了磷锑共掺氧化锡Sn1–3xSbxP2xO2+δ(x=0.004,0.010,0.030,0.050)材料。利用XRD、SEM、电阻–温度特性测试系统和交流阻抗技术对所制氧化锡材料的物相组成、微观结构及导电特性进行了研究。结果表明:在x=0.004和0.010时,所制氧化锡材料由纯四方结晶相组成,但在x≥0.030时,材料中出现了微量的P2O5和SnP2O7杂质相;所制氧化锡材料的电阻–温度特性具有负温度系数(NTC)效应,这主要是晶粒效应和晶界效应共同作用的结果;最后利用能带理论对该材料的NTC导电机理进行了分析讨论。P/Sb co-doped tin oxides, Sn1-3xSbxP2xO2+δ (x=0.004, 0.010, 0.030, 0.050), were prepared by the wet-chemical synthesis method. The phase composition, microstructure and electrical conduction characteristics of the prepared tin oxides were studied with XRD, SEM, a resistance-temperature characteristic measurement system and AC impedance technique. The results show that the prepared tin oxides are composed of pure tetragonal crystal phase when small amount of P/Sb are doped (x=0.004, 0.010), while a few impurities, P20 and SnP207, are found to be present in the tin oxides when more P/Sb are doped; The prepared tin oxides show a negative temperature coefficient (NTC), as a result of both the grain effect and the grain-boundary effect; Finally, the NTC electrical conduction mechanisms of the tin oxides are analyzed and discussed with the energy band theory.
分 类 号:TB381[一般工业技术—材料科学与工程]
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