自由载流子吸收损耗控制研究  

Research on Loss Control of Free Carrier Absorption

作　　者：刘军[1] 罗章[2] 陈亮[1] 张显鹏[1] 

机构地区：[1]西北核技术研究所,陕西西安710024 [2]国防科技大学光电科学与工程学院,湖南长沙410073

出　　处：《光学与光电技术》2012年第3期92-96,共5页Optics & Optoelectronic Technology

摘　　要：利用数值方法研究了SOI脊形光波导损耗问题,重点讨论了PIN结构对自由载流子损耗控制的影响情况。研究表明SOI脊形波导在引入PIN结构后,偏置电压、入射光强和本征区宽度是影响自由载流子吸收损耗的主要因素,通过调整PIN结所加偏置电压、入射光强和本征区宽度,可以实现对脊形波导自由载流子吸收损耗的控制。计算结果可为硅基光调制器和拉曼激光器的设计制备提供一定的参考依据。Dissipation of SOI rib waveguide has been investigated via the numerical method. The influence of PIN structure on the free carrier absorption of waveguide is mainly studied. The result shows that bios volt, optical intensity and width of intrinsic layer are key factors influencing free carrier absorption loss, which are introduced by the PIN structure. In order to make control of the loss of rib waveguide, bios-volt, incident optical intensity and intrinsic width need to be flexibly select- ed. The calculated result will provide some reference data for silicon-based modulator and Raman laser.

关 键 词：集成光学 自由载流子 损耗 PIN结 

分 类 号：TN25[电子电信—物理电子学]