半导体放电管固体场畸变三电极开关  

Semiconductor arrester solid field distortion three-electrode discharge switch

作　　者：赵越[1] 王传伟[1] 王凌云[1] 刘宏伟[1] 李洪涛[1] 谢卫平[1] 

机构地区：[1]中国工程物理研究院流体物理研究所,四川绵阳621900

出　　处：《强激光与粒子束》2012年第4期868-870,共3页High Power Laser and Particle Beams

摘　　要：基于半导体放电管过电压自击穿原理,探索设计了一种固体场畸变三电极开关。该开关由两组半导体放电管阵列印刷电路组成,受到触发时,一组半导体放电管阵列首先击穿,另一组阵列继而过电压自击穿,开关导通。实验测试了特定幅值触发脉冲时的负载电压,初步验证了半导体放电管固体场畸变三电极开关设计的可行性。讨论了降低开关导通电感,提高通流能力、工作电压及运行频率的方法。A three-electrode solid field distortion switch is designed based on over-voltage self-breakdown of semiconductor arrester.It includes two semiconductor arrester arrays and a trigger electrode.When it is triggered,self-breakdown of arrester arrays happens consecutively to turn on the switch.The voltage of load is tested by experiment with specific trigger pulse.It is preliminarily proved that the design of the solid semiconductor arrester field distortion three-electrode discharge switch is feasible.Meantime,measures for decreasing transient inductance,and increasing current,operating voltage and repetitive rate are discussed.

关 键 词：半导体放电管 场畸变 三电极 多元胞 

分 类 号：TM836[电气工程—高电压与绝缘技术]