氮化铝晶体生长技术的研究进展  

Research Progress in Growth of Aluminum Nitride Crystal

作　　者：赵超亮[1] 宋波[2] 张幸红[1] 韩杰才[1] 

机构地区：[1]哈尔滨工业大学特种环境复合材料技术国防科技重点实验室,哈尔滨150001 [2]哈尔滨工业大学基础与交叉科学研究院,哈尔滨150001

出　　处：《材料导报》2012年第9期11-14,26,共5页Materials Reports

基　　金：国家自然科学基金(50902037;51172055);中央高校基本科研业务费专项资金(HIT.ICRST2010008)

摘　　要：氮化铝(AlN)是一种重要的宽带隙(6.2eV)半导体材料,在高温、高频、大功率电子器件、光电子器件、激光器件等半导体器件中有着良好的应用前景。物理气相传输法(PVT)是制备AlN体单晶最有效的途径之一,目前,美国Crystal IS公司、俄罗斯N-Crystals公司在该领域处于领先地位,可以制备出直径为2inch(5.08cm)的体单晶。为了获得大尺寸、高质量的AlN晶体,需要不断寻找合适的籽晶材料。从最早的SiC籽晶,发展到近年来的AlN籽晶、SiC/AlN复合籽晶,加上不断改进的PVT工艺条件,少数研究机构已经可以获得直径跨度大、缺陷密度低的AlN晶体。近两年,高品质的AlN晶体也已成功应用于紫外LED的研制。Aluminum nitride（AlN） is a significant wide band-gap semiconductor material, which is propective in many semiconductor devices such as high-temperature, high-frequency, large-power electronic devices, optoeleetronic devices, laser devices and so on. Physical vapor transport method （PVT） is one of the most effective method for the growth of AlN bulk crystal. Currently, Crystal IS Ltd, U. S. , N-Crystals Ltd, Russia, are capable to prepare AlN bulk crystal 2inch in diameter, which are in the leading position in this field. In order to obtain AlN crystal with large area and high quality, consistent search for compatible seed material is needed. From the earlier SiC seed , to the recent developed AIN seed and SiC/AlN seed, along with improved process conditions, a few research institutions have access to AlN crystal with large size in diameter and low defect density. During the past two years, high-quality AlN crystals have been successfully applied to the development of UV-LED.

关 键 词：氮化铝 物理气相传输 籽晶 

分 类 号：TN204[电子电信—物理电子学]