CIGS薄膜太阳能电池吸收层的非真空制备工艺研究进展  

Research Progress in Non-vacuum Processing for Absorber Layer of CIGS Thin Film Solar Cell

作　　者：李伟[1] 刘平[1] 王卫兵[1] 马凤仓[1] 刘新宽[1] 陈勤妙[2] 韩朝霞[2] 

机构地区：[1]上海理工大学材料科学与工程学院,上海200093 [2]上海理工大学光电信息与计算机工程学院,上海200093

出　　处：《材料导报》2012年第9期134-137,147,共5页Materials Reports

基　　金：国家自然科学基金(51101101);上海市教委"晨光计划"(09CG51);上海市教委重点学科项目(J50503)

摘　　要：综述了CIGS薄膜非真空制备工艺的研究现状,主要包括电化学沉积法、纳米颗粒沉积法、化学反应法和其他方法,指出了其主要问题和发展方向。非真空制备工艺制备CIGS薄膜一般包括两个步骤:第一,利用各种非真空工艺制备出预制层薄膜;第二,对预制层进行退火处理结晶成CIGS薄膜。相对于真空制备工艺,非真空制备工艺制备CIGS薄膜可大大降低CIGS薄膜太阳能电池的生产成本,越来越多地受到研究者和厂商的关注。The non-vacuum technologies for preparation of CIGS film are summarized, including electrocleposltion, nano particle paste, chemical reaction and other technologies. The primary problems and the development direction are eventually prospected. The non-vacuum technologies generally consisted of two steps. Firstly, the precursor layers were synthesized by various non-vacuum technologies. Secondly, the precursor layers were subjected to annea ling treatment, resulting in formation of CIGS films. Comparing with vacuum technology, non-vacuum technology could remarkably lower the production costs, which had attracted more and more attention from researchers and manufacturers.

关 键 词：CIGS 太阳能电池 吸收层 非真空工艺 

分 类 号：TM914.42[电气工程—电力电子与电力传动]