Al_2O_3基陶瓷及玻璃基底制备Ta-N薄膜微结构与电学特性的比较研究  

Comparison of Microstructure and Electrical Properties of Ta-N Films Deposited on Al_2O_3-based Ceramic and Glass Substrates

作　　者：马扬昭[1] 谢中[1] 周艳明[1] 夏丰金[1] 冯双磊[1] 李科[1] 

机构地区：[1]湖南大学物理与微电子科学学院,长沙410082

出　　处：《材料导报》2012年第10期23-26,共4页Materials Reports

基　　金：中央高校基本科研业务费(531107040232;53110704334)

摘　　要：在N2、Ar气氛中,采用反应直流磁控溅射法在Al2O3基陶瓷及玻璃基底上制备了Ta-N薄膜,并对各样品的形貌结构、化学组分及电学特性进行了比较分析研究。结果表明,沉积于Al2O3陶瓷及玻璃基底的Ta-N薄膜分别呈团簇状生长与层状紧密堆积生长;Al2O3陶瓷基底沉积的Ta-N为单相薄膜,而玻璃基底上的Ta-N薄膜,随N2、Ar流量比增加,呈单相向多相共存转变;薄膜表面形貌和微结构与基底材料的原始形貌和微结构紧密相关,这说明基底材料对薄膜的形成有重要的影响;N2、Ar流量比相同时,玻璃基底上沉积的Ta-N薄膜电性能优于Al2O3基陶瓷基底上沉积的Ta-N薄膜。Ta-N thin films were deposited on A12 O3-based ceramic and glass substrates by DC magnetron reac- tive sputtering in N2/Ar ambient with different N2 flow rates. The morphology, microstructure, chemical component and electrical properties were studied. The result shows that the Ta-N thin films deposited on A1203-based ceramic substrates grow with clusters composed of numerous nanocrystallites, while the films deposited on the glass substrates grow in the way of sandwich close-stack. Moreover, it can be found that the Ta-N films deposited on Al2O3-based ceramic substrates are always composed of single-phase as the increase of Ne partial pressure. The deposited Ta-N films on the glass substrates formed with single-phase of Ta-N grains are transformed into the films composed of multi- phase with the increase of the N2/Ar flow ratio. The surface morphology and microstructure of films is related with the initial surface morphology and microstructure of the substrates. The substrates play an important role in the formation of film and the electrical properties of Ta-N films deposited on glass substrate were better than that of film deposited on Al2O3-based ceramic substrates.

关 键 词：Al2O3基陶瓷基底 玻璃基底Ta-N薄膜反应磁控溅射氮分压 电阻温度系数 

分 类 号：TB43[一般工业技术] O484.4[理学—固体物理]