Electrical and γ-ray energy spectrum response properties of PbI_2 crystal grown by physical vapor transport  

作　　者：孙辉 朱兴华 杨定宇 何知宇 朱世富 赵北君 

机构地区：[1]Department of Materials Science,Sichuan University [2]School of Optoelectronic Technology,Chengdu University of Information Technology

出　　处：《Journal of Semiconductors》2012年第5期17-20,共4页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(No.50902012);the Natural Science Foundation of Sichuan Province,China(No.2009JY0087)

摘　　要：Lead iodide single crystal was grown by physical vapor transport method.Two radiation detectors with different configurations were fabricated from the as-grown crystal.The electrical and y-ray response properties at room temperature of the both detectors were investigated.It is found that the dark resistivity of the detectors are respectively 3×10^（10）Ω·cm for bias electric field parallel to crystal c-axis（E//c） and 2×10~8Ω·cm for perpendicular to crystal c-axis（E⊥c）.The energy spectrum response measurement shows that both detectors were sensitive to ^（241） Am 59.5 keVγ-rays,and achieved a good energy resolution of 16.8%for the E⊥c-axis configuration detector with a full width at half maximum of 9.996 keV.Lead iodide single crystal was grown by physical vapor transport method.Two radiation detectors with different configurations were fabricated from the as-grown crystal.The electrical and y-ray response properties at room temperature of the both detectors were investigated.It is found that the dark resistivity of the detectors are respectively 3×10^（10）Ω·cm for bias electric field parallel to crystal c-axis（E//c） and 2×10~8Ω·cm for perpendicular to crystal c-axis（E⊥c）.The energy spectrum response measurement shows that both detectors were sensitive to ^（241） Am 59.5 keVγ-rays,and achieved a good energy resolution of 16.8%for the E⊥c-axis configuration detector with a full width at half maximum of 9.996 keV.

关 键 词：PbI_2 crystal physical vapor transport radiation detector γ-rays energy spectrum 

分 类 号：O782[理学—晶体学] TN248.5[电子电信—物理电子学]