Analysis of the electrical characteristics of GaInP/GaAs HBTs including the recombination effect  

作　　者：Gourab Dutta Sukla Basu 

机构地区：[1]Indian Institute of Technology Kharagpur [2]ECE Department,Kalyani Government Engineering College

出　　处：《Journal of Semiconductors》2012年第5期38-43,共6页半导体学报（英文版）

摘　　要：An analytical model is used to predict the effects of surface recombination current on the gain and transit time of GalnP/GaAs heterojunction bipolar transistors（HBTs）.The present analysis shows that consideration of the recombination current gives current gain values that are comparable to those of the experimental results.The dependence of current gain on temperature,base doping and emitter area are also analyzed,and the variation in collector current with emitter-base voltage,temperature and doping is considered.An analytical model is used to predict the effects of surface recombination current on the gain and transit time of GalnP/GaAs heterojunction bipolar transistors（HBTs）.The present analysis shows that consideration of the recombination current gives current gain values that are comparable to those of the experimental results.The dependence of current gain on temperature,base doping and emitter area are also analyzed,and the variation in collector current with emitter-base voltage,temperature and doping is considered.

关 键 词：GaInP/GaAs HBT current gain transit time recombination current surface recombination ideality factor 

分 类 号：TN322.8[电子电信—物理电子学] TN304.26