Substrate-bias effect on the breakdown characteristic in a new silicon high-voltage device structure  

作　　者：李琦 王卫东 赵秋明 韦雪明 

机构地区：[1]Guangxi Key Laboratory of Wireless Wideband Communication&Signal Processing,Guilin University of Electronic Technology

出　　处：《Journal of Semiconductors》2012年第5期48-52,共5页半导体学报（英文版）

基　　金：Project supported by the Guangxi Natural Science Foundation of China(No.2010GXNSFB013054);the Guangxi Key Science and Technology Program of China(No.11107001-20)

摘　　要：A novel silicon double-RESURF LDMOS structure with an improved breakdown characteristic by substrate bias technology（SB） is reported.The P-type epitaxial layer is embedded between an N-type drift region and an N-type substrate to block the conduction path in the off-state and change the distributions of the bulk electric field.The substrate bias strengthens the charge share effect of the drift region near the source,and the vertical electric field peak under the drain is decreased,which is especially helpful in improving the vertical breakdown voltage in a lateral power device with a thin drift region.The numerical results by MEDICI indicate that the breakdown voltage of the proposed device is increased by 97%compared with a conventional LDMOS,while maintaining a low on-resistance.A novel silicon double-RESURF LDMOS structure with an improved breakdown characteristic by substrate bias technology（SB） is reported.The P-type epitaxial layer is embedded between an N-type drift region and an N-type substrate to block the conduction path in the off-state and change the distributions of the bulk electric field.The substrate bias strengthens the charge share effect of the drift region near the source,and the vertical electric field peak under the drain is decreased,which is especially helpful in improving the vertical breakdown voltage in a lateral power device with a thin drift region.The numerical results by MEDICI indicate that the breakdown voltage of the proposed device is increased by 97%compared with a conventional LDMOS,while maintaining a low on-resistance.

关 键 词：substrate bias breakdown voltage diode on-resistance 

分 类 号：TN303[电子电信—物理电子学]