Novel SOI double-gate MOSFET with a P-type buried layer  

作　　者：姚国亮 罗小蓉 王琦 蒋永恒 王沛 周坤 吴丽娟 张波 李肇基 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China [2]Science and Technology on Analog Integrated Circuit Laboratory

出　　处：《Journal of Semiconductors》2012年第5期57-60,共4页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos.60806025,60976060);the State Key Laboratory of Electronic Thin Films and Integrated Devices,China(No.CXJJ201004)

摘　　要：An ultra-low specific on-resistance（R_（on,sp）） integrated silicon-on-insulator（SOI） double-gate triple RESURF（reduced surface field） n-type MOSFET（DG T-RESURF） is proposed.The MOSFET features two structures： an integrated double gates structure（DG） that combines a planar gate with an extended trench gate,and a p-type buried layer（BP） in the n-type drift region.First,the DG forms dual conduction channels and shortens the forward current path,so reducing R_（on,sp）.The DG works as a vertical field plate to improve the breakdown voltage （BV） characteristics.Second,the BP forms a triple RESURF structure（T-RESURF）,which not only increases the drift doping concentration but also modulates the electric field.This results in a reduced R_（on,sp） and an improved BV.Third,the extended trench gate and the BP linked with the p-body region reduce the sensitivity of the BV to position of the BP.The BV of 325 V and R_（on,sp） of 8.6 mΩ·cm^2 are obtained for the DG T-RESURF by simulation. R_（on,sp） of DG T-RESURF is decreased by 63.4%in comparison with a planar-gate single RESURF MOSFET（PG S-RESURF）,and the BV is increased by 9.8%.An ultra-low specific on-resistance（R_（on,sp）） integrated silicon-on-insulator（SOI） double-gate triple RESURF（reduced surface field） n-type MOSFET（DG T-RESURF） is proposed.The MOSFET features two structures： an integrated double gates structure（DG） that combines a planar gate with an extended trench gate,and a p-type buried layer（BP） in the n-type drift region.First,the DG forms dual conduction channels and shortens the forward current path,so reducing R_（on,sp）.The DG works as a vertical field plate to improve the breakdown voltage （BV） characteristics.Second,the BP forms a triple RESURF structure（T-RESURF）,which not only increases the drift doping concentration but also modulates the electric field.This results in a reduced R_（on,sp） and an improved BV.Third,the extended trench gate and the BP linked with the p-body region reduce the sensitivity of the BV to position of the BP.The BV of 325 V and R_（on,sp） of 8.6 mΩ·cm^2 are obtained for the DG T-RESURF by simulation. R_（on,sp） of DG T-RESURF is decreased by 63.4%in comparison with a planar-gate single RESURF MOSFET（PG S-RESURF）,and the BV is increased by 9.8%.

关 键 词：SOI double gates specific on-resistance RESURF breakdown voltage 

分 类 号：TN386[电子电信—物理电子学]