热退火对KDP晶体损伤阈值的影响(英文)  被引量:4

Effect of thermal conditioning on laser damage threshold of KDP crystal

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作  者:徐明霞[1] 张剑锋[2] 王正平[1] 王波[1] 刘宝安[1] 孙洵[1] 许心光[1] 

机构地区:[1]山东大学晶体材料国家重点实验室,济南250100 [2]成都精密光学工程研究中心,成都610041

出  处:《强激光与粒子束》2012年第5期1089-1092,共4页High Power Laser and Particle Beams

基  金:National Natural Science Foundation of China(60978027,61178060);Program for New Century Excellent Talents in University(NCET-10-0526);Natural Science Foundation of Shandong Province(2009ZRB01907,ZR2010EM001);Doctoral Program Foundation of Institutions of Higher Education of China(20090131120035)

摘  要:研究了不同退火温度下磷酸二氢钾(KDP)晶体的透过光谱和损伤阈值的变化。发现热退火对晶体的透过光谱没有影响,退火温度分别为140℃和160℃时晶体的损伤阈值没有明显变化。但是在150℃下,晶体的损伤阈值提高了约1.4倍。实验证明150℃下的热退火对提高晶体的损伤阈值效果最好。Potassium dihydrogen phosphate(KDP) crystals were baked at different temperatures in the same procedure.Samples from similar locations of as-grown 500-mm-class KDP crystals were used to measure the transmission spectra and laser damage thresholds.The results prove that the transmission spectra are not affected by thermal conditioning,and the laser damage thresholds of samples after annealing at 140 ℃and 160 ℃ are not significantly different from that of the unconditioned sample.However,for samples annealing at 150 ℃ a 1.4 times increase in the laser damage threshold is observed at 1ω,indicating that the annealing temperature of 150 ℃ is the best for elevating the laser damage threshold of KDP crystals.

关 键 词:KDP晶体 热退火 透过光谱 激光损伤阈值 

分 类 号:O734[理学—晶体学]

 

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