铒、钪膜中离子注入氦的热解析行为  

Thermal desorption behavior of ion-implanted helium from erbium and scandium films

作　　者：周晓松[1] 申华海[2] 彭述明[1] 龙兴贵[1] 杨莉[2] 祖小涛[2] 

机构地区：[1]中国工程物理研究院核物理与化学研究所,四川绵阳621900 [2]电子科技大学物理电子学院,成都610054

出　　处：《强激光与粒子束》2012年第5期1169-1172,共4页High Power Laser and Particle Beams

基　　金：国家自然科学基金委员会-中国工程物理研究院联合基金项目(10976007);中国工程物理研究院科学技术基金项目(2009A0301015)

摘　　要：采用热解析法初步研究了铒、钪膜中离子注入氦的热解析行为。研究结果表明:同种元素铒中离子注入氦的热释放峰位相同,但膜的致密性将影响氦的释放量,结构疏松的膜中存在的孔洞是氦的快速释放通道;在相同注入剂量和能量条件下,铒、钪膜中注入氦的热释放峰位不同,这可能与氦在铒、钪膜中的深度分布及膜的致密性有关,利用质子增强背散射法测量出能量为60keV的4 He+在铒、钪膜中的注入深度分别为210,308nm。The thermal desorption behavior of ion-implanted helium in erbium and scandium films was investigated by means of thermal helium desorption spectrometry.The peak positions of ion-implanted helium desorption are the same for erbium films with different surface morphologies.The degree of denseness of films,however,will affect the amount of released helium as the implanted helium releases through the path of cavities existing in the loose film before thermal desorption.The difference in peak positions of helium desorption from erbium and scandium films may be related to the depth distribution of helium and the degree of denseness of films.The helium implantation depths measured by enhanced proton backscattering spectrometry are 210 and 308 nm,respectively,for erbium and scandium films with the implantation energy of 60 keV.

关 键 词：铒膜 钪膜 氦离子注入 热解析 氦泡 

分 类 号：TL2[核科学技术—核燃料循环与材料] O642[理学—物理化学]