非晶态碲镉汞的暗电导率和吸收边(英文)  

Dark Conductivity and Absorption Edge of Amorphous Hg_(0.8)Cd_(0.2)Te Film

作　　者：孔金丞[1] 张鹏举[1] 杨佩原[2] 李雄军[1] 孔令德[1] 杨丽丽[1] 赵俊[1] 王光华[1] 姬荣斌[1] 

机构地区：[1]昆明物理研究所,云南昆明650223 [2]中国兵器科学研究院,北京100089

出　　处：《红外技术》2012年第5期268-271,共4页Infrared Technology

基　　金：Project supported by the National Natural Science Foundation of China(No.60576069)

摘　　要：研究了非晶态碲镉汞(x=0.2)薄膜的暗电导率随温度变化关系,发现非晶态结构的碲镉汞材料具有明显的半导体特性,其室温禁带宽度在0.88～0.91eV之间,与通过光学方法获得的结果相符。在80～240K的温度区间非晶态碲镉汞(x=0.2)的暗电导率从1×10—8Ω—1.cm—1缓慢增大到5×10-8Ω—1.cm—1,温度大于240K时,其电导率剧烈增大到1×10—5Ω—1.cm—1,说明在240K附近非晶态碲镉汞材料的导电机制发生了变化,这对非晶态碲镉汞材料的应用研究具有重要意义。还研究了退火过程对非晶态碲镉汞薄膜电导率的影响,结果表明140℃退火后非晶态碲镉汞薄膜发生了部分晶化。Experimental results on the temperature dependence of the conductivity and the spectrum of the absorption coefficient of amorphous Hg0.8Cd0.2Te are reported.Amorphous Hg0.8Cd0.2Te is found to be a semiconductor with a 0.88-0.91 eV band gap.Conductivity of amorphous Hg0.8Cd0.2Te increase slowly from 1×10—8 W—1·cm—1 to 5×10-8 W—1·cm—1 in the temperature range of 80 K to 240 K,increase drastically from 5×10-8 W—1·cm—1 to 1×10—5 W—1·cm—1 when temperature higher than 240 K,it is indicated that the conduction occurs by different mechanism.The influence of a 140℃ anneal on conductivity and absorption edge of amorphous Hg0.8Cd0.2Te films is studied.

关 键 词：非晶态碲镉汞 电导率 吸收边 

分 类 号：TN215[电子电信—物理电子学]