缺陷分布对Ag-SiO2薄膜电阻翻转效应的影响  

Influences of dislocation distribution on the resistive switching effect of Ag-SiO_2 thin films

作　　者：张培健[1] 孟洋[1] 刘紫玉[1] 潘新宇[1] 梁学锦[1] 陈东敏[1] 赵宏武 

机构地区：[1]北京凝聚态物理国家实验室中国科学院物理研究所,北京100190

出　　处：《物理学报》2012年第10期423-428,共6页Acta Physica Sinica

基　　金：国家重点基础研究发展规划项目(批准号:2007CB925002和2009CB930803);中国科学院知识创新工程项目(批准号:KJCX2-YW-W24)资助的课题~~

摘　　要：通过改变制备条件,研究了Ag-SiO_2薄膜中的缺陷对电阻翻转效应的影响.对比不同的热处理实验条件,发现在120℃退火的样品经forming过程后具有稳定的电阻转变特性;另一方面,在Ar/O_2混合气氛下生长的SiO_2具有比在纯Ar下生长的样品更加稳定、重复的电阻转变特性.通过实验分析,表明热处理、电场作用和样品制备气氛可以改变、调节样品中的缺陷分布(Ag填隙原子和氧空位缺陷),从而导致Ag-SiO_2中基于缺陷的导电通道结构的形成和湮灭,提出了提高电阻翻转稳定性的必要条件.Influences of dislocation distribution on the resistive switching effect of Ag doped SiO2 thin film are investigated under different sample preparation conditions. Stable resistance switching characteristics are observed for the samples annealed at 120℃ and prepared in Ar/O2 mixed atmosphere. It is shown that annealing process, electric field formation and atmosphere of preparation can change the intensity and the distribution of the dislocations （Ag interstitial atoms and oxygen vacancies） in the Ag-SiO2 structure, which leads to the resistive switching effect based on the formation and annihilation of the conducting filaments.

关 键 词：电阻翻转效应 缺陷 热处理 

分 类 号：O484.42[理学—固体物理]