Growth and Characterization of Doped CeO_2 Buffers on Ni-W Substrates for Coated Conductors Using Metal Organic Deposition Method  

作　　者：王耀 卢亚锋 

机构地区：[1]Northwest Institute for Nonferrous Metal Research [2]State Key Laboratory of Solidification Processing, Northwestern Polytechnical University

出　　处：《Journal of Wuhan University of Technology(Materials Science)》2012年第3期471-476,共6页武汉理工大学学报（材料科学英文版）

基　　金：Funded by the National Natural Science Foundation of China;National 863 Program of China(Nos.50872115and2009AA03Z203)

摘　　要：CeO2 and Ce0.8M0.2O2-d films （M = Mn, Y, Gd, Sm, Nd and La） with （00l） preferred orientation have been prepared on biaxially textured Ni-W substrates by metal organic decomposition （MOD） method. The factors influencing the formation of cracks on the surface of these CeO2 and doped CeO2 films on Ni-W substrates were explored by X-ray diffraction （XRD）, scanning electron microscopy （SEM） analysis, atomic force microscopy （AFM） and differential scanning calorimetry （DSC）. The results indicate that many factors, such as the change of the ionic radii of doping cations, the transformation of crystal structure and the formation of oxygen vacancies in lattices at high annealing temperature, may be related to the formation of cracks on the surface of these films. However, the crack formation shows no dependence on the crystal lattice mismatch degree of the films with Ni-W substrates. Moreover, the suppression of surface cracks is related to the change of intrinsic elasticity of CeO2 film with doping of cations with a larger radius. SEM and AFM investigations of Ce0.8M0.2O2-d （M = Y, Gd, Sm, Nd and La） films reveal the dense, smooth and crack-free microstructure, and their lattice parameters match well with that of YBCO, illuminating that they are potentially suitable to be as buffer layer, especially as cap layer in multi-layer architecture of buffer layer for coated conductors.CeO2 and Ce0.8M0.2O2-d films （M = Mn, Y, Gd, Sm, Nd and La） with （00l） preferred orientation have been prepared on biaxially textured Ni-W substrates by metal organic decomposition （MOD） method. The factors influencing the formation of cracks on the surface of these CeO2 and doped CeO2 films on Ni-W substrates were explored by X-ray diffraction （XRD）, scanning electron microscopy （SEM） analysis, atomic force microscopy （AFM） and differential scanning calorimetry （DSC）. The results indicate that many factors, such as the change of the ionic radii of doping cations, the transformation of crystal structure and the formation of oxygen vacancies in lattices at high annealing temperature, may be related to the formation of cracks on the surface of these films. However, the crack formation shows no dependence on the crystal lattice mismatch degree of the films with Ni-W substrates. Moreover, the suppression of surface cracks is related to the change of intrinsic elasticity of CeO2 film with doping of cations with a larger radius. SEM and AFM investigations of Ce0.8M0.2O2-d （M = Y, Gd, Sm, Nd and La） films reveal the dense, smooth and crack-free microstructure, and their lattice parameters match well with that of YBCO, illuminating that they are potentially suitable to be as buffer layer, especially as cap layer in multi-layer architecture of buffer layer for coated conductors.

关 键 词：coated conductors buffer layer metal organic deposition 

分 类 号：TG174.44[金属学及工艺—金属表面处理]