Structural and Electrochemical Performance of Additives-doped a-Ni(OH)_2  

Structural and Electrochemical Performance of Additives-doped a-Ni(OH)_2

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作  者:张仲举 朱燕娟 

机构地区:[1]School of Physics and Optoelectronic Engineering, Guangdong University of Technology

出  处:《Journal of Wuhan University of Technology(Materials Science)》2012年第3期538-541,共4页武汉理工大学学报(材料科学英文版)

基  金:Funded by National Natural Science Foundation of China (No.10774030);Science and Technology Program of Guangzhou City of China (No.2008J1-C161)

摘  要:The additives-doped α-nickel hydroxides were prepared by supersonic co-precipitation method. The crystal structure and grain size of the prepared samples were characterized by X-ray diffraction (XRD) and Particle size distribution (PSD), respectively. Cyclic voltammetry (CV) tests show that Al-Co-Y doped Ni(OH)2 has better reaction reversibility, higher proton diffusion coefficient than those of Al-Co doped Ni(OH)2. Al-Co-Y doped Ni(OH)2 also has lower charge-transfer resistance as shown by electrochemical impedance spectroscopy (EIS). Charge/discharge tests show that the discharge capacity of Al-Co-Y doped Ni(OH)2 reaches 328 mAh/g at 0.2 C and 306 mAh/g at 0.5 C, while Al-Co doped Ni(OH)2 can only discharge a capacity of 308 mAh/g at 0.2 C and 267 mAh/g at 0.5 C.The additives-doped α-nickel hydroxides were prepared by supersonic co-precipitation method. The crystal structure and grain size of the prepared samples were characterized by X-ray diffraction (XRD) and Particle size distribution (PSD), respectively. Cyclic voltammetry (CV) tests show that Al-Co-Y doped Ni(OH)2 has better reaction reversibility, higher proton diffusion coefficient than those of Al-Co doped Ni(OH)2. Al-Co-Y doped Ni(OH)2 also has lower charge-transfer resistance as shown by electrochemical impedance spectroscopy (EIS). Charge/discharge tests show that the discharge capacity of Al-Co-Y doped Ni(OH)2 reaches 328 mAh/g at 0.2 C and 306 mAh/g at 0.5 C, while Al-Co doped Ni(OH)2 can only discharge a capacity of 308 mAh/g at 0.2 C and 267 mAh/g at 0.5 C.

关 键 词:additives-doped particle size distribution reaction reversibility proton diffusion coefficient charge-transfer resistance 

分 类 号:O614.31[理学—无机化学]

 

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