一种高电源抑制比、高阶温度补偿CMOS带隙基准源  

A High PSRR,High-Order Temperature Compensation CMOS Bandgap Reference

作　　者：李盛林[1] 

机构地区：[1]广东理工职业学院,广东广州510091

出　　处：《中国集成电路》2012年第5期34-38,共5页China lntegrated Circuit

摘　　要：本文提出一种高电源抑制比、高阶温度补偿CMOS带隙基准电压源。该基准源的核心电路结构由传统的Brokaw带隙基准源和一个减法器构成。文中采用第二个运放产生一个负温度系数的电流来增强曲率补偿,同时把该负温度系数电流与核心基准源电路产生的正温度系数电流求和得到一个与温度无关的电流给运放提供偏置电流。该电路采用0.35umCMOS工艺实现,仿真结果表明PSRR在1kHz时达到88dB,-40-125℃的范围内温度系数为1.03ppm/℃。A high PSRR bandgap reference （ BGR ） in CMOS technology,with high-order temperature compensation is presented. The core of this bandgap consists of the conventional Brokaw bandgap reference and a simple voltage subtractor circuit.The curvature compensation is achieved by using a second Opamp that generates a inversely proportional to absolute temperature （IPTAT） current,which is subsequently used to enhance the curvature compensation, furthermore, the IPTAT current add the PTAT current that generates form bandgap core circuit get a temperature independent current,which is used as bias current of Opamps. The result show PSRR is 88dB at lkHz and the temperature coefficient is 1.03 ppm/℃ over a temperature range of -40 to 125 for 0.35um CMOS technology.

关 键 词：CMOS基准源 高电源抑制比 高阶温度补偿 

分 类 号：TN432[电子电信—微电子学与固体电子学]