Si_2N_2O标准生成吉布斯自由能的测定  

Measurement of standard Gibbs free energy of formation for Si_2N_2O

作　　者：董鹏莉[1] 张梅[2] 郭敏[2] 王习东[3] 

机构地区：[1]中国金属学会,北京100711 [2]北京科技大学冶金与生态工程学院,北京100083 [3]北京大学资源与环境工程学院,北京100871

出　　处：《耐火材料》2012年第3期169-173,共5页Refractories

基　　金：自然科学基金(50332010);973(2007CB613608);技术支撑项目(2006BAC21B02-1和2007BAB24B03)

摘　　要：用两种方法测量了Si2N2O的标准生成吉布斯自由能ΔfGθSi2N2O:其一是在0.1 MPa氮气压力条件下,在1 073～1 869 K范围内,利用Y2O3稳定ZrO2固体电解质,以Cr和Cr2O3为参比电极,用极化法测试;其二是在1 673和1 773 K下通过Ni-NiO平衡控制氧分压法测试。结果表明,两者吻合很好,其表达式可写为:ΔfGθSi2N2O=-960.627+0.292T±6.2(kJ·mol-1),其中1 073 K≤T≤1 869 K。The standard Gibbs free energy of formation for Si2N2O was measured by two methods. The first was polarization method with O. 1 MPa of nitrogen pressure, 1 073-1 869 K of temperature, yttria stabilized zirconia as solid electrolyte and Cr-Cr2O3 as reference electrode. The second was conducted at ] 673 and i 773 K under balanced oxygen partial pressure controlled by Ni-NiO mixture. Two test results coincide with each other well and they can be described as Af △fGSi2N2O^θ=-960.627＋0.292T±6.2（kJ·mol^-1）, where 1 073 K≤ T≤1 869 K.

关 键 词：SI2N2O 固体电解质 标准生成吉布斯自由能 热力学测试 

分 类 号：TQ174[化学工程—陶瓷工业]