单轴晶体材料的Casimir效应调控研究  

Research on the Casimir Effect for the Uniaxial Crystal Plate

作　　者：汪飞[1] 曾然[1] 李齐良[1] 

机构地区：[1]杭州电子科技大学通信工程学院,杭州310018

出　　处：《电子器件》2012年第2期115-118,共4页Chinese Journal of Electron Devices

基　　金：国家自然科学基金(10904028);浙江省自然科学基金(Y1110078)

摘　　要：Casimir效应最初表现为理想导体平板之间存在的真空作用力,近年来在微机械和纳米机械领域中具有重要影响和作用。考虑单轴晶体平行材料板的光轴几种不同取向,通过电磁场应力张量方法计算了单轴晶体平板间的Casimir作用力,其中平板间为真空区域。仿真结果表明,Casimir作用力在短距下受到较强抑制,而随着板间距的增大抑制逐渐放缓,直至可以恢复到约为理想导体板间力的1/10,同时Casimir力也随各晶体参数发生变化,进而可由此调控Casimir效应。Initially,the Casimir effect is vacuum interaction force between the perfectly conducting plates.In recent years it has significant influence on micro-machine and nano-machine.The Casimir force between uniaxial crystal plates is calculated by means of electromagnetic field stress tensor method when different situations of the optical axis of the crystal plate are considered,and the area between plates is the vacuum.After simulating,we can see that the Casimir force is greatly restrained at short distances,and with the increasing distance the force may recover up to about 1 /10 the perfect conductor force,meanwhile the Casimir force also makes change with the parameters of the crystal,and consequently it can be controlled with those relations.

关 键 词：单轴晶体 CASIMIR力 应力张量 色散材料 晶体参数 

分 类 号：O431.2[机械工程—光学工程]