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出 处:《材料导报》2000年第4期59-60,共2页Materials Reports
摘 要:介绍了化学气相渗C/C材料在国内外的发展状况,指出落后的工艺技术阻碍了我国C/C产业的发展。金属所发明的化学气相渗新技术——HCVI能低成本快速制备C/C、C-SiC系列热结构复合材料。该方法是在热梯度法基础上,利用电磁耦合原理使反应气体中间产物在交变电磁场作用下更加活泼、碰撞几率增多,从而增加了沉积速率。试验证明采用这种新工艺制备C/C材料沉积速率提高了30~50倍,该方法特别适合制备碳和陶瓷基复合材料。Heaterless chemical vapor infiltration(HCVI) is a novel method of preparation technology of C/C. C-SiC family thermostructural composites invented in Institute of Metal Research. This technique which is based on thermal gradient CVI employing electromagnetic coupling principle possesses the higher deposition rate compared with other CVI methods,because free radicals formed by reactant gases decomposing in high temperature are more active in electromagnetic field,resuting in increase of their effective collision. The experiment results showed that deoposition rate of fabricating C/C composites was improved 30-50 times,i. e. only 20h need in fabricating C/C composites of carbon felt perform of 20mm thick in density of 1. 7g/cm3. This method has proven especially useful for the production of carbon and ceramic matrix composites.
关 键 词:C/C材料 C/SIC 热结构复合材料 航空航天材料
分 类 号:V257[一般工业技术—材料科学与工程]
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