光子晶体的能态密度及带隙特性  

Energy State Density and Bandgap Characteristics of Photonic Crystal

作　　者：宗明吉[1] 薛冬[1] 梁兰菊[1] 

机构地区：[1]枣庄学院物理与电子工程系,山东省枣庄市北安路1号277160

出　　处：《光谱实验室》2012年第3期1633-1636,共4页Chinese Journal of Spectroscopy Laboratory

基　　金：山东省2009年高等学校科技计划项目(J09LG56);山东省优秀中青年科学家科研奖励基金项目(2008BS01021);枣庄市科学技术发展计划项目(200926-5)

摘　　要：基于平面波展开法数值模拟了硅、锗、磷化铝和氮化镓三代半导体材料构成三角晶格光子晶体的带隙特性,并且验证了文献[3]中这几种材料构成光子晶体能态密度的分布,两者数据吻合较好,研究结果为光子晶体器件的构造提供理论依据。Based on the plane wave expansion method,numerical simulation of the silicon,germanium,phosphating aluminum and gallium nitride three generations semiconductor material constituted the bandgap characteristics of the triangle photonic crystal,and the energy state density distributions of the several materials composition of photonic crystal in the literature were verified,the both of data were relatively good identical,and the results provided the theory basis for structure of photonic crystal device.

关 键 词：光子晶体 平面波展开法 能态密度分布 

分 类 号：O572.31[理学—粒子物理与原子核物理]