sol-gel法制备KTN薄膜厚度及均匀性控制  

Control of thickness and homogeneity of KTN thin film prepared by sol gel process

作　　者：王龙海 罗英军 王世敏[2] 黄桂玉[2] 

机构地区：[1]湖北十堰大学电子工程系,湖北十堰442000 [2]湖北大学压电陶瓷技术研究所,湖北武汉430062

出　　处：《电子元件与材料》2000年第2期5-6,共2页Electronic Components And Materials

基　　金：国家自然科学基金资助项目 !5930 2 0 1 5

摘　　要：利用干涉法、扫描电子显微镜 (SEM)、 X射线衍射 (XRD)等方法分析 sol- gel法制备的 KTN (钽铌酸钾 )薄膜 ,详细分析讨论 gel膜制备及热处理过程各因素对薄膜厚度及均匀性的影响。结果表明控制 gel膜厚度及均匀性的关键是根据溶液黏度的变化及时调整匀胶转速、热处理过程中用低的升降温速度和通氧 ,整个工艺控制容易、重复性好。最终制出的薄膜为表面晶粒大小均匀、排列紧密、厚度一致、纯钙钛矿结构、高取向的KTN薄膜。ELECTRONIC COMPONENTS & MATERIALS (China), Vol 19, No 2, P 5 6 (Apr 2000) In Chinese The KTN thin films prepared by sol gel method are analyzed by interference method, SEM and XRD The influences of the processes for preparing gel films and heat treatment on the film thickness and homogeneity are discussed It is important for controlling thickness and homogeneity to adjust spinning speed by the change of viscosity in preparing gel film, to lower the heating cooling rate and to oxygenize in heat treatment The process is easy to control and has good repeatability By the process, a high oriented perovskite KTN thin film can be obtained, of which the size of the crystal grains on the surface is homogeneous, the thickness uniform and the density high (8 refs )

关 键 词：溶胶凝胶法 钽铌酸钾薄膜 厚度控制 均匀性控制 

分 类 号：TN304.055[电子电信—物理电子学]